Broadband transistor bias network

ABSTRACT

An amplifying circuit for use in, for example, broadband transceivers is described. A bias filter is connected between an amplifying transistor and a power supply to block a wide range of frequencies associated with amplified RF input signals from reaching the power supply, while permitting DC power to reach the transistor.

TECHNICAL FIELD

The present invention generally relates to transistor networks andassociated methods and, more particularly, to transistor bias networksand associated methods which can, for example, be used in amplifiercircuits associated with broadband communication technologies.

BACKGROUND

During the past years, the interest in using mobile andlandline/wireline computing devices in day-to-day communications hasincreased. Desktop computers, workstations, and other wireline computerscurrently allow users to communicate, for example, via e-mail, videoconferencing, and instant messaging (IM). Mobile devices, for example,mobile telephones, handheld computers, personal digital assistants(PDAs), etc. also allow the users to communicate via e-mail, videoconferencing, IM, etc. Mobile telephones have conventionally served asvoice communication devices, but through technological advancements theyhave recently proved to be effective devices for communicating data,graphics, etc. Wireless and landline technologies continue to merge intoa more unified communication system, as user demand for seamlesscommunications across different platforms increases.

As these technologies have advanced, applications which use them havelikewise advanced to provide users with video streaming and othermultimedia services. Such services require higher bandwidth channelsbetween the network and the end user devices to avoid unacceptablelatency, among other things. Thus, for example, each successivegeneration of wireless communication technology which is promulgated bythe various standards bodies has typically enabled an end user device toacquire greater bandwidth channels for communication. Such systems aresometimes referred to as “wideband” or “broadband” systems to emphasizethe increased bandwidth availability which they provide.

Devices employed in such systems use transceivers to transmit andreceive broadband signals. The transmit portions of such devicestypically employ an amplifier to amplify the signals prior to couplingthe signals to one or more antennas for transmission. Such broadbandamplification circuits include transistors. Transistors operating in anAC coupled environment typically include a bias network that decouplesthe power supply circuit from the signals that are being amplified bythe transistor amplifier. Bias networks for relatively narrowbandsignals typically include a parallel inductor and capacitor arrangementso that they resonate at a frequency that is within the band offrequencies corresponding to the signal being amplified.

An example of a conventional amplifying circuit 100 is provided asFIG. 1. Therein, the matching circuit 102 is designed such that theimpedance z4 seen by the matching circuit 102 at point 104 is Z_(load)and the impedance z3 seen looking into the matching circuit at point 106is the conjugate of Z_(SPC) (i.e., Z*_(SPC)), where Z_(SPC) is theoperating impedance of the transistor 108.

The signal to be amplified is injected into the amplifying circuit 100at point 110. The transistor 108 amplifies the signal by transferringsubstantially all of the energy (minus losses) from node 112 to the node104. The energy from the power supply (not shown) which is delivered tonode 112 is in a different form than the amplified signal energy whichis delivered to node 104, which energy conversion process is intrinsicto the transistor 108's amplification capability.

Also connected to the drain of the transistor 108 is a bias network 114.The drain bias network 114 includes at least one inductor 116 and atleast one capacitor 118 connected to one another in parallel, and isused to prevent the signal amplified by the transistor 108 from leakinginto the power supply circuits at node 112 and to allow energy to passfrom power supply 112 to transistor amplifier 106. When the inductor 116and the capacitor 118 are at resonance, then together they form a highimpedance at the resonant frequency. If this resonant frequencycorresponds to the frequency of the signal being amplified, then theamplified signal at node 106 will be substantially blocked fromtravelling to node 112, and thus onward into the power supply circuitry(not shown) which is connected to node 112.

A problem with the bias network 114 illustrated in FIG. 1 is that whenthe signal applied to node 110 for amplification contains a wide rangeof frequencies, then the high impedance associated with resonance of theLC circuit 116, 118 cannot be maintained over the entire range offrequencies associated with the amplified signal. Degradation of thesignal at node 106 occurs and there may also be problems caused bysignal leakage through node 112 to the power supply circuitry.

Accordingly, it would be desirable to provide amplifying circuits havingbias networks and associated methods which avoid the afore-describedproblems and drawbacks.

SUMMARY

The following exemplary embodiments provide advantages and benefitsrelative to existing bias networks including, for example, thepossibility to reduce the amount of signal degradation and/or leakageassociated with transistor-based amplification circuits operating onbroadband signals. This can be accomplished by, for example, employing afilter as the bias network instead of a parallel connected LCarrangement. It will be appreciated by those skilled in the art,however, that the claims are not limited to those embodiments whichproduce any or all of these advantages or benefits and that otheradvantages and benefits may be realized depending upon the particularimplementation.

According to an exemplary embodiment, a broadband multiple frequency RFamplifier configured to amplify multiple frequency RF input signals overan operating bandwidth to drive a load includes a transistor configuredto amplify the RF input signals to drive the load, a power supplyconfigured to provide power usable by the transistor to amplify the RFinput signals, a bias filter, connected to the transistor and to thepower supply, which is configured to couple the power supply to thetransistor to supply DC energy from the power supply to the transistor,and which is further configured to block the amplified RF input signalsover substantially the entire operating bandwidth from reaching thepower supply, and a matching circuit configured to couple the transistorto the load, wherein a first impedance, seen by looking into thematching circuit from the load, is substantially equal to the conjugateimpedance of the load, wherein a second impedance, seen looking into thematching circuit from the transistor, is a conjugate of an operatingimpedance of the transistor, wherein a load impedance, seen by the biasfilter, is substantially equal to the operating impedance of thetransistor, and wherein a termination impedance of the bias filter onthe power supply connection is one of a short circuit and an opencircuit.

According to another exemplary embodiment, a method for manufacturing abroadband, multiple frequency RF amplifier which is configured toamplify multiple frequency RF input signals over an operating bandwidthto drive a load includes the steps of determining a load impedance forthe amplifier, determining an operating impedance of a transistor, whichtransistor is configured to amplify the RF input signals to drive theload, using the operating impedance of the transistor and the loadimpedance to determine first impedance values for elements of a matchingcircuit, using the operating impedance to determine second impedancevalues associated with elements of a bias filter, which bias filter isconfigured to couple a power supply to the transistor to supply DCenergy from the power supply to the transistor, and which is furtherconfigured to block the amplified RF input signals over substantiallythe entire operating bandwidth from reaching the power supply,connecting the matching circuit to the transistor and to the load, andconnecting the bias filter to the power supply, the transistor and thematching circuit, wherein a first impedance, seen by the matchingcircuit from the load, is substantially equal to a conjugate of theimpedance of the load, wherein a second impedance, seen looking into thematching circuit from the transistor, is a conjugate of the operatingimpedance of the transistor, wherein a load impedance, seen by the biasfilter, is substantially equal to the operating impedance of thetransistor, and wherein a termination impedance of the bias filter onthe power supply connection is one of a short circuit and an opencircuit.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of the specification, illustrate one or more embodiments and,together with the description, explain these embodiments. In thedrawings:

FIG. 1 is a circuit diagram of a conventional amplifying circuit;

FIG. 2 is a circuit diagram of an amplifying circuit according to anexemplary embodiment;

FIG. 3 is a flow chart depicting a method of manufacturing an amplifyingcircuit according to an exemplary embodiment;

FIG. 4 is a circuit diagram of an amplifying circuit according to anexemplary embodiment including a diplexer filter; and

FIG. 5 is a circuit diagram of an amplifying circuit according toanother exemplary embodiment including a multiplexer filter.

DETAILED DESCRIPTION

The following description of the exemplary embodiments refers to theaccompanying drawings. The same reference numbers in different drawingsidentify the same or similar elements. The following detaileddescription does not limit the invention. Instead, the scope of theinvention is defined by the appended claims. The following embodimentsare discussed, for simplicity, with regard to the terminology andstructure of amplification circuits including MOSFET transistors.However, the embodiments to be discussed next are not limited to thesespecific types of amplification circuits but may be applied to othersuch circuits, e.g., those including other types of transistors.

Reference throughout the specification to “one embodiment” or “anembodiment” means that a particular feature, structure, orcharacteristic described in connection with an embodiment is included inat least one embodiment of the present invention. Thus, the appearanceof the phrases “in one embodiment” or “in an embodiment” in variousplaces throughout the specification are not necessarily all referring tothe same embodiment. Further, the particular features, structures orcharacteristics may be combined in any suitable manner in one or moreembodiments.

According to an embodiment, the parallel connected LC bias network 114described above with respect to FIG. 1 is replaced with a bias filterwhich is designed to operate over an arbitrarily wide signal bandwidth,i.e., a bandwidth associated with the particular broadband signal to beamplified. The bias filter is thus designed so as to block amplifiedsignals from entering the power supply while passing the DC energy fromthe power supply to the transistor. The bias filter is also designed soas to not affect the characteristics of the matching circuitry over theoperating bandwidth of the match. This means that, in practice, becausethe bias filter is designed to have a stopband at the operatingfrequencies associated with the RF input signals and the matchingcircuit also operates over those same frequencies, then the bandwidth ofthe stopband of the bias filter can be made at least equal to theoperating frequencies to avoid the consequence that the bias filterwould adversely impact the operation of the matching circuit.

An amplifying circuit 200 according to an embodiment is illustrated inFIG. 2. Therein, the matching circuit 102, transistor 108, and otherelements having the same reference numbers used in FIG. 1 to identifysimilar elements will be understood to be designed in the same manner,and operate in the same way, as correspondingly numbered elements in thecircuit of FIG. 1. The bias filter 202 can, for example, be designed asa singly terminated filter wherein the load impedance z2 seen by thefilter 202 is Z_(SPC), i.e., the operating impedance of the transistor108. The specific design of, and components associated with, the biasfilter 202 will vary based on the specifics of the rest of theamplifying circuit 200 for different implementations and signals to beamplified as will be appreciated by those skilled in the art. For moreinformation on filter design which can be used to create bias filtersaccording to these exemplary embodiments, the interested reader isdirected to the book entitled “Active and Passive Analog Filter Design”by Huelsman, McGraw-Hill, 1993, the disclosure of which is incorporatedhere by reference. Additional details regarding methods of manufacturingamplifying circuits according to embodiments are described below withrespect to FIG. 3.

Returning first to FIG. 2, the source termination impedance z1 of thesingly terminated bias filter 202 is either a short or open circuitdepending upon the nature of the power supply circuit 204 to which it isconnected. For example, if the power supply circuit 204 is a voltagesource, then the source termination of bias filter 202 will be a shortcircuit. Alternatively, if the power supply 204 is a current source,then the source termination of bias filter 202 will be an open circuit.

The bias filter 202 can, for example, be implemented as either a lowpassfilter or a bandstop filter which will reject the frequencies associatedwith the RF input signals (and amplified RF input signals), but whichwill pass DC signals, i.e., power from the power supply circuit 204.Thus, a highpass or bandpass filter would generally not be a suitablechoice for use as bias filter 202.

As mentioned above, embodiments also consider a method for manufacturinga transistor amplifier using a bias filter, an example of which isillustrated in FIG. 3. Initially, at step 300, a load impedance Z_(load)206 of the amplifying circuit is specified or determined for a givenimplementation. Similarly, the transistor 108's operating impedance isalso determined or characterized at step 302. The inputs 300 and 302 maybe obtained by, for example, either taking impedance measurements of thecircuit elements or from the technical specifications of the vendorswhich sell the transistor elements 108 and load elements 206.

Given these inputs, the process continues to design the matching circuit102 and bias filter 202, in steps 304, 306 and 308, 310, respectively.More specifically, the matching circuit or network 102 is synthesizedusing the transistor operating impedance Z_(SPC) and the load impedanceZ_(load) at step 304. Then, the resulting matching network parameters,i.e., capacitance, inductance and/or resistance values, can be modifiedat step 306 to account for circuit parasitics, i.e., unintendedcapacitance, inductance and/or resistance generated by the placement ofvarious circuit elements, connecting traces, board dielectric, etc.

On the right hand side of FIG. 3, the design of the bias filter 202includes the step 308 of synthesizing the bandstop or lowpass filterusing the transistor's operating impedance Z_(SPC) which was determinedat step 302, and either an open or short source termination as describedabove and using, for example, the principles discussed in theabove-incorporated by reference filter design book (and/or filtersynthesis software which operates based upon such principles) todetermine impedance values for elements of the bias filter 202. Again,parasitics can be accounted for at step 310 to enhance performance ofthe bias filter 202. Although illustrated as parallel processes in FIG.3, it will be appreciated by those skilled in the art that the design ofthe matching circuit 102 and bias network 202 can be performed serially,and in any desired order. Once the design is completed, the electricalcomponents (e.g., resistors, capacitors, inductors, transistor,connecting traces, etc.) may be mounted on a circuit board and connectedtogether, as indicated generally by step 312, in order to complete themanufacture of the amplifying circuit 200. More specifically, and forexample, the matching circuit 102 can be connected to the transistor 108and to the load 206, and the bias filter 202 can be connected to thepower supply 204, the transistor 108 and the matching circuit 102.

Although not shown in FIG. 3, compensation for the parasitics associatedwith the power supply 204 (essentially those parts of the power supplythat make it not an ideal voltage or current source) can be incorporatedinto the bias filter design portion of the method of FIG. 3 as well.

Based on the foregoing discussion, it will be appreciated that,according to an embodiment, a broadband multiple frequency RF amplifierconfigured to amplify multiple frequency RF input signals over anoperating bandwidth to drive a load includes a transistor 108 configuredto amplify the RF input signals to drive the load 206, a power supply204 configured to provide power usable by the transistor 108 to amplifythe RF input signals, a bias filter 202, connected to the transistor 108and to the power supply 204, which is configured to couple the powersupply 204 to the transistor 108 to supply DC energy from the powersupply 204 to the transistor 108, and which is further configured toblock the amplified RF input signals over substantially the entireoperating bandwidth from reaching the power supply 204, and a matchingcircuit 102 configured to couple the transistor 108 to the load 206,wherein a first impedance, seen by the matching circuit 102 from theload 206, is substantially equal to the conjugate impedance of the load206, wherein a second impedance, seen looking into the matching circuit102 from the transistor 108, is a conjugate of an operating impedance ofthe transistor 108, wherein a load impedance, seen by the bias filter202, is substantially equal to the operating impedance of the transistor108, and wherein a termination impedance of the bias filter 202 on thepower supply connection is one of a short circuit and an open circuit.Note in this regard that the conjugate impedance of the load 206 may bea complex conjugate if capacitance and or inductive impedances areincluded as load elements.

As mentioned earlier, although transistor 108 is depicted in the Figuresas a MOSFET transistor, amplifying circuits according to these exemplaryembodiments may employ any desired type of transistors. Such transistorsinclude, but are not limited to MOSFET, JFET, FET, HBT, MESFET andbipolar transistors.

Although the bias filter 202 according to exemplary embodiments may bedesigned as any desired filter or combination of filters which operatein accordance with the afore-described principles, some more specific(yet purely illustrative) examples of such bias filters 202 will now bedescribed with respect to FIGS. 4 and 5. Starting with FIG. 4, the biasfilter 202 is implemented in this embodiment as a diplexer filter 400which includes a parallel connected lowpass filter 402 and highpass orbandpass filter 404 disposed between the power supply circuit 204 andthe transistor 108. In this exemplary embodiment, the lowpass filter 402operates to pass DC energy from the power supply circuit 204 to thetransistor 108, while the highpass or bandpass filter 404 operates toblock frequencies within the operating bandwidth from reaching the powersupply 404.

FIG. 5 depicts another exemplary embodiment of a multiplexer filterdesign for bias filter 202. Therein, the multiplexer filter 500 includesa lowpass filter 502, one or more parallel bandpass and/or bandstopfilters 504 and an optional highpass filter 506, all connected to oneanother in parallel between the power supply 204 circuit and thetransistor 108. In this exemplary embodiment, the lowpass filter 502operates to pass DC energy from the power supply 204 to the transistor108, while the other ones of the multiple filters 504, 506 operate toselectively block signals having other frequencies. For example, ifmultiple stopbands are desirable to block signals (e.g., at thefrequency band of the RF input signals and at lower (video) frequencies)this embodiment can be implemented.

Although the features and elements of the embodiments are described inthose embodiments in particular combinations, each feature or elementcan be used alone without the other features and elements of theembodiments or in various combinations with or without other featuresand elements disclosed herein. The methods or flow charts provided inthe present application may be implemented, at least in part, in acomputer program, software, or firmware tangibly embodied in acomputer-readable storage medium for execution by a general purposecomputer or a processor. This written description uses examples of thesubject matter disclosed to enable any person skilled in the art topractice the same, including making and using any devices or systems andperforming any incorporated methods. The patentable scope of the subjectmatter is defined by the claims, and may include other examples thatoccur to those skilled in the art. Such other examples are intended tobe within the scope of the claims.

The invention claimed is:
 1. A broadband multiple frequency RF amplifierconfigured to amplify multiple frequency RF input signals over anoperating bandwidth to drive a load, the amplifier comprising: atransistor configured to amplify the RF input signals to drive the load;a power supply configured to provide power usable by said transistor toamplify the RF input signals; a bias filter, connected to saidtransistor and to said power supply, which is configured to couple thepower supply to the transistor to supply DC energy from the power supplyto the transistor, and which is further configured to block theamplified RF input signals over substantially the entire operatingbandwidth from reaching the power supply; and a matching circuitconfigured to couple the transistor to the load.
 2. The amplifieraccording to claim 1, wherein a first impedance, seen by the matchingcircuit from the load, is substantially equal to a conjugate of theimpedance of the load.
 3. The amplifier according to claim 2, wherein asecond impedance, seen looking into the matching circuit from thetransistor, is a conjugate of an operating impedance of the transistor.4. The amplifier according to claim 1, wherein a load impedance, seen bythe bias filter, is substantially equal to the operating impedance ofthe transistor.
 5. The amplifier according to claim 1, wherein atermination impedance of the bias filter on the power supply connectionis one of a short circuit and an open circuit.
 6. The amplifier of claim1, wherein said bias filter is a singly terminated low pass filter. 7.The amplifier of claim 1, wherein said bias filter is a singlyterminated bandstop filter.
 8. The amplifier of claim 1, wherein saidbias filter is a duplexer filter comprised of two filters connected inparallel, wherein one of said two filters is a lowpass filter which isconfigured to pass direct current from said power supply to saidtransistor, and wherein another of said two filters is a highpass orbandpass filter which is configured with a stopband high enough toprevent frequencies within said operating bandwidth from passing to thepower supply.
 9. The amplifier of claim 1, wherein said bias filter is amultiplexer filter comprised of multiple filters connected in parallel,wherein one of said multiple filters passes DC from the power supply tothe transistor, and wherein a remaining one or more of said multiplefilters selectively block or pass specific operating frequencies withinsaid operating bandwidth.
 10. The amplifier of claim 9, wherein saidremaining one or more of said multiple filters includes at least onebandstop, bandpass or highpass filter.
 11. The amplifier of claim 5,wherein said termination impedance of said bias filter is a shortcircuit if said power supply is a voltage source.
 12. The amplifier ofclaim 5, wherein said termination impedance of said bias filter is anopen circuit if said power supply is a current source.
 13. The amplifierof claim 1, wherein said transistor is one of a MOSFET, JFET, FET, HBT,MESFET and bipolar transistor.
 14. A method for manufacturing abroadband, multiple frequency RF amplifier which is configured toamplify multiple frequency RF input signals over an operating bandwidthto drive a load, the method comprising: determining a load impedance forthe amplifier; determining an operating impedance of a transistor, whichtransistor is configured to amplify the RF input signals to drive theload; using said operating impedance of said transistor and said loadimpedance to determine first impedance values for elements of a matchingcircuit; using said operating impedance to determine second impedancevalues associated with elements of a bias filter, which bias filter isconfigured to couple a power supply to the transistor to supply DCenergy from the power supply to the transistor, and which is furtherconfigured to block the amplified RF input signals over substantiallythe entire operating bandwidth from reaching the power supply;connecting said matching circuit to said transistor and to said load;and connecting said bias filter to said power supply, said transistorand said matching circuit.
 15. The method according to claim 14, whereina first impedance, seen looking into the matching circuit from the load,is substantially equal to the conjugate impedance of the load.
 16. Themethod according to claim 14, wherein a second impedance, seen lookinginto the matching circuit from the transistor, is a conjugate of theoperating impedance of the transistor.
 17. The method according to claim14, wherein a load impedance, seen by the bias filter, is substantiallyequal to the operating impedance of the transistor.
 18. The methodaccording to claim 14, wherein a termination impedance of said biasfilter is one of a short circuit and an open circuit.
 19. The method ofclaim 14, wherein said bias filter is a singly terminated low passfilter.
 20. The method of claim 14, wherein said bias filter is a singlyterminated bandstop filter.
 21. The method of claim 14, wherein saidbias filter is a duplexer filter comprised of two filters connected inparallel, wherein one of said two filters is a lowpass filter which isconfigured to pass direct current from said power supply to saidtransistor, and wherein another of said two filters is a highpass orbandpass filter which is configured with a stopband high enough toprevent frequencies within said operating bandwidth from passing to thepower supply.
 22. The method of claim 14, wherein said bias filter is amultiplexer filter comprised of multiple filters connected in parallel,wherein one of said multiple filters passes DC from the power supply tothe transistor, and wherein the remaining one or more of said multiplefilters selectively block or pass specific operating frequencies withinsaid operating bandwidth.
 23. The method of claim 22, wherein saidremaining one or more of said multiple filters includes at least onebandstop, bandpass or highpass filter.
 24. The method of claim 18,wherein said termination impedance of said bias filter is a shortcircuit if said power supply is a voltage source.
 25. The method ofclaim 18, wherein said termination impedance of said bias filter is anopen circuit if said power supply is a current source.
 26. The method ofclaim 14, wherein said transistor is one of a MOSFET, JFET, FET, HBT,MESFET and bipolar transistor.
 27. The method of claim 14, furthercomprising the step of: adjusting the bias filter to account for circuitparasitics in the transistor and matching circuitry.
 28. The method ofclaim 14, further comprising the step of: adjusting the bias filter toaccount for circuit parasitics in the power supply.